| Co掺杂对BST薄膜介电性能的影响 |
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| 引用本文： | 高丽娜,杨晓静,张良莹,姚熹.Co掺杂对BST薄膜介电性能的影响[J].电子元件与材料,2005,24(11):49-51. |
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| 作者姓名： | 高丽娜 杨晓静 张良莹 姚熹 |
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| 作者单位： | 同济大学功能材料研究所,上海,200092 |
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| 基金项目： | 国家重点基础研究发展计划(973计划);上海市学科建设项目 |
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| 摘 要： | 用sol-gel法在Pt/Ti/SiO2/Si(100)衬底上制备了掺Co的钛酸锶钡(BST)薄膜,研究了Co的掺杂量x(Co)对BST薄膜的晶相结构和电学性能的影响。结果表明:随着x(Co)的增加,BST薄膜的介电常数εr,介质损耗tgδ和漏电流密度JL均降低;当x(Co)为5%时,BST薄膜的εr、tgδ、JL、可调性和品质因子分别为:228.3、0.013、3.69×10–7 A/cm2、15.4%、12.03。
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| 关 键 词： | 无机非金属材料 BST薄膜 Co掺杂 sol-gel法 介电性质 可调性 |
| 文章编号： | 1001-2028（2005）11-0049-03 |
| 收稿时间： | 2005-06-03 |
| 修稿时间： | 2005-06-03 |
Influence of Co Doping on the Properties of BST Thin Film |
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| GAO Li-na,YANG Xiao-jing,ZHANG Liang-ying,YAO Xi.Influence of Co Doping on the Properties of BST Thin Film[J].Electronic Components & Materials,2005,24(11):49-51. |
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| Authors: | GAO Li-na YANG Xiao-jing ZHANG Liang-ying YAO Xi |
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| Abstract: | Co-doped barium strontium titanate(BST) thin films were prepared by sol-gel method on a platinum-coated silicon substrate.The structure and electric properties effected by Co-doped were investigated.The results of the research show that as the content of Co-doped increasing,the dielectric constant and dielectric loss of the BST thin film reduce.As x(Co) reaches 5%,the dielectric constant,dielectric loss,tunability,leakage current density and the value of Q are 228.3、0.013、 3.69×10–7 A/cm2(at 10 V)、15.4%(at 200 kV/cm)、12.03,respectively. |
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| Keywords: | inorganic non-metallic materials BST thin film Co-doped sol-gel method dielectric properties tunability |
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