| 多孔硅M/PS结的研究 |
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| 引用本文： | 徐伟弘,许国良,王发强.多孔硅M/PS结的研究[J].光电子技术,2003,23(1):24-26. |
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| 作者姓名： | 徐伟弘 许国良 王发强 |
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| 作者单位： | 1. 东南大学电子工程系,南京,210096
2. 南京大学光通信工程研究中心,南京,210093 |
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| 摘 要： | 对不同金属形成的M／PS／Si/Al结构样品进行测试，发现其I－V特性曲线具有相似的形状，区别仅在于高偏压下的串连电阻不同，通过进行表面态对M／PS影响的分析可知M／PS具有欧姆行为特性。
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| 关 键 词： | 多孔硅 I－V特性 |
| 文章编号： | 1005-488X(2003)01-0024-03 |
| 修稿时间： | 2002年7月3日 |
The Study of the Porous Silicon M/PS Nodes |
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| XU Wei hong ,XU Guo liang ,WANG Fa qiang.The Study of the Porous Silicon M/PS Nodes[J].Optoelectronic Technology,2003,23(1):24-26. |
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| Authors: | XU Wei hong XU Guo liang WANG Fa qiang |
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| Affiliation: | XU Wei hong 1,XU Guo liang 2,WANG Fa qiang 2 |
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| Abstract: | The samples with the structure of M/PS/Si/Al deposited with different metal films were measured. The results indicated that the I V characteristics of all the samples had the similar shape. The only difference among the samples is that their series resistances were different. With the analysis of the effect of surface state on the M/PS, it is concluded that M/PS possess the ohm characteristics. |
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| Keywords: | porous silicon I V characteristic |
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