| 浸没式光刻技术的研究进展 |
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| 引用本文： | 袁琼雁,王向朝,施伟杰,李小平. 浸没式光刻技术的研究进展[J]. 激光与光电子学进展, 2006, 43(8): 13-20 |
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| 作者姓名： | 袁琼雁 王向朝 施伟杰 李小平 |
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| 作者单位： | 中国科学院上海光学精密机械研究所信息光学实验室,上海,201800;中国科学院研究生院,北京,100039;哈尔滨工业大学深圳研究生院激光信息技术研究中心,深圳,518055;华中科技大学机械科学与工程学院,武汉,430074 |
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| 摘 要： | 浸没式光刻技术是将某种液体充满投影物镜最后一个透镜的下表面与硅片之间来增加系统的数值孔径，可以将193nm光刻延伸到45nm节点以下。阐述了浸没式光刻技术的原理，讨论了液体浸没带来的问题，最后介绍了浸没式光刻机的研发进展。
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| 关 键 词： | 光刻 浸没式光刻 投影物镜 浸没液体 偏振光照明 气泡 |
| 收稿时间： | 2006-05-11 |
| 修稿时间： | 2006-05-112006-06-06 |
Development of Immersion Lithography |
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| YUAN Qiongyan,WANG Xiangzhao,SHI Weijie,LI Xiaoping. Development of Immersion Lithography[J]. Laser & Optoelectronics Progress, 2006, 43(8): 13-20 |
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| Authors: | YUAN Qiongyan WANG Xiangzhao SHI Weijie LI Xiaoping |
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| Affiliation: | 1. Information Optics Laboratory, Shanghai Institute of Optics and Fine Mechanics, The Chinese Academy of Scienees, Shanghai 201800; 2. Graduate School of the Chinese Academy of Sciences, Beijing 100039; 3. Research Center of Laser Information Technology Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 ;4 .School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 |
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| Abstract: | Immersion lithography uses some kind of fluid filling the space between the bottom surface of the last lens and wafer, to enlarge the numerical aperture of system and will extend the 193nm lithography below 45nm node. The principle of immersion lithography is analyzed, several fundamental issues of immersion lithography are discussed, and development status of the immersion lithographic tools is described. |
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| Keywords: | lithography immersion lithography projection lens immersion fluid polarized illumination bubbles |
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