Universal-Vdd 0.65-2.0-V 32-kB cache using avoltage-adapted timing-generation scheme and a lithographicallysymmetrical cell |
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Authors: | Osada K. Jinuk Luke Shin Khan M. Liou Y. Wang K. Shoji K. Kuroda K. Ikeda S. Ishibashi K. |
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Affiliation: | Syst. LSI Res. Dept., Hitachi Ltd., Tokyo; |
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Abstract: | A universal-Vdd 32-kB four-way-set-associative embedded cache has been developed. A test cache chip was fabricated by using 0.18-μm enhanced CMOS technology, and it was found to continuously operate from 0.65 to 2.0 V. Its operating frequency and power are from 120 MHz and 1.7 mW at 0.65 V to 1.04 GHz and 530 mW at 2.0 V. The cache is based on two new circuit techniques: a voltage-adapted timing-generation scheme with plural dummy cells for the wider voltage-range operation, and use of a lithographically symmetrical cell for lower voltage operation |
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