| W波段单刀双掷开关 |
| |
| 引用本文： | 孔 斌,雷闻章,赵 伟,张 勇,徐锐敏.W波段单刀双掷开关[J].太赫兹科学与电子信息学报,2014,12(1):81-84. |
| |
| 作者姓名： | 孔 斌 雷闻章 赵 伟 张 勇 徐锐敏 |
| |
| 作者单位： | Fundamental Science on EHF Laboratory，University of Electronics Science and Technology of China，Chengdu Sichuan 611731，China;Fundamental Science on EHF Laboratory，University of Electronics Science and Technology of China，Chengdu Sichuan 611731，China;Fundamental Science on EHF Laboratory，University of Electronics Science and Technology of China，Chengdu Sichuan 611731，China;Fundamental Science on EHF Laboratory，University of Electronics Science and Technology of China，Chengdu Sichuan 611731，China;Fundamental Science on EHF Laboratory，University of Electronics Science and Technology of China，Chengdu Sichuan 611731，China |
| |
| 基金项目： | 中央高校基本科研基金资助项目(ZYGX2011X002；ZYGX2011J018) |
| |
| 摘 要： | 实现了一种采用微波开关（PIN）二极管设计的低插损、高隔离度的 W波段单刀双掷开关（SPDT）。电路采用了改进的 Y 型结和梳状线高通滤波器形式的鳍线结构，有效提高了端口隔离度，降低了插入损耗。仿真结果显示，导通端口在88 GHz～99 GHz内的插入损耗小于0.7 dB，断开端口隔离度大于58 dB。测试结果显示，在频段90 GHz～95 GHz内，输入端口与输出端口1之间的插入损耗低于3.7 dB、隔离度高于33 dB；输入端口与输出端口2之间的隔离度高于33 dB、插入损耗低于3.8 dB。
|
| 关 键 词： | 毫米波 鳍线 单刀双掷 微波开关二极管 |
| 收稿时间： | 2013/1/11 0:00:00 |
| 修稿时间： | 2013/3/22 0:00:00 |
W-band Single Pole Double Throw switch |
| |
| KONG Bin,LEI Wen-zhang,ZHAO Wei,ZHANG Yong and XU Rui-min.W-band Single Pole Double Throw switch[J].Journal of Terahertz Science and Electronic Information Technology,2014,12(1):81-84. |
| |
| Authors: | KONG Bin LEI Wen-zhang ZHAO Wei ZHANG Yong and XU Rui-min |
| |
| Affiliation: | (Fundamental Science on EHF Laboratory, University of Electronics Science and Technology of China,Chengdu Sichuan 611731,China) |
| |
| Abstract: | A W-band Single Pole Double Throw(SPDT) switch with low insertion loss and high isolation that based on Positive Intrinsic Negative(PIN) diodes is presented. The finline structure in the form of comb-line high pass filter and an improved Y-shaped junction are introduced into the circuits to increase the isolation and reduce the insertion loss. Simulated results show that in the range of 88 GHz~99 GHz, the insertion loss of the SPDT is less than 0.7 dB, and the isolation is more than 58 dB. In the range of 90 GHz~95 GHz, the insertion loss at output port 1 is less than 3.7 dB, and the isolation is greater than 33 dB, while at output port 2, the insertion loss is less than 3.8 dB and the isolation is greater than 33 dB, which are indicated by experimental results. |
| |
| Keywords: | millimeter wave finline Single Pole Double Throw Positive Intrinsic Negative diode |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《太赫兹科学与电子信息学报》浏览原始摘要信息 |
|
点击此处可从《太赫兹科学与电子信息学报》下载全文 |
