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Growth and characterization of ZnO thin films on GaN epilayers |
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| Authors: | T P Smith H A McLean David J Smith P Q Miraglia A M Roskowski R F Davis |
| Affiliation: | (1) Department of Materials Science and Engineering, North Carolina State University, 27695-7907 Raleigh, NC;(2) Department of Physics and Astronomy and Center for Solid State Science, Arizona State University, 85287-1704 Tempe, AZ;(3) Present address: General Electric Corporation, Worthington, OH;(4) Present address: Charles Stark Draper Laboratory, Cambridge, MA;(5) Present address: Intel Corporation, Hillsborough, OR |
| Abstract: | Dense ZnO(0001) films formed at 500°C via coalescence of islands grown via metalorganic vapor phase epitaxy (MOVPE) either on GaN/AlN/SiC(0001) substrates or on initial, coherent ZnO layers. Conical crystallites formed due to thermal expansion-induced stresses between the ZnO and the substrate. Interfaces between the ZnO films on GaN epilayers exposed either simultaneously to diethylzinc and oxygen or only to diethylzinc at the initiation of growth were sharp and epitaxial. Interfaces formed after the exposure of the GaN to O2 were less coherent, though an interfacial oxide was not observed by cross-sectional transmission electron microscopy (TEM). Threading dislocations and stacking faults were observed in all films. |
| Keywords: | Zinc oxide (ZnO) thin film metalorganic vapor phase epitaxy thermal expansion interfacial oxide transmission electron microscopy stacking faults threading dislocations |
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