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Anisotropic Dielectric and Electrical Properties of Hot-Forged SrBi4Ti4O15 Ceramics
Authors:Sanjeeb K. Rout  Prema K. Barhai  Ela Sinha  Ali Hussain  W. Kim III
Affiliation:1. Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi 835215, India

* skrout@bitmesra.ac.in, drskrout@gmail.com;2. Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi 835215, India;3. Department of Physics, National Institute of Technology, Rourkela, Orissa 769008, India;4. School of Materials Science and Engineering, University of Ulsan, Ulsan 680749, Republic of Korea;5. Department of Physics, University of Ulsan, Ulsan 680749, Republic of Korea

Abstract:The effect of grain orientation on the dielectric and electrical properties of SrBi4Ti4O15 ceramics are studied by impedance and modulus spectroscopy. The degree of orientation calculated from the X-ray diffraction pattern is found to be 94.2% along the c-axis of the crystal structure. The ratio of permittivity along the perpendicular to parallel direction is found to be ∼2.5 at the Curie temperature. The nonsuperimposition of the normalized Z″ and M″ versus frequency plot revealed that the conduction is localized and deviate from ideal Debye-like behavior. The conduction mechanism has been explained on the basis of jump relaxation model.
Keywords:
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