Identification of structural defects in graphitic materials by gas-phase anisotropic etching

We developed a method of identifying the structural defects in graphitic materials by an anisotropic etching technique. Intrinsic and oxygen- or argon- plasma induced artificial defects' density and domain size can be obtained easily and precisely. It was inferred, through our investigations, that the grade ZYA highly oriented pyrolytic graphite (HOPG) sample has a better crystal quality, with a lower defect density, while the Kish graphite has a larger grain size and higher defect density. Defect types and lattice orientations can also be extracted by this technique. Furthermore, this method could apply to various graphitic materials including graphene.