As注入长波碲镉汞红外探测器工艺研究

p-on-n结构的碲镉汞红外探测器具有长的少子寿命、低暗电流、高R0A值等优点,是高温器件、长波甚长波器件发展的重要器件结构.而国内还鲜有砷注入掺杂p-on-n长波HgCdTe探测器的相关报道,为了满足军事、航天等领域对高性能长波探测器迫切的应用需求,针对As离子注入的长波p-on-n碲镉汞红外探测器退火工艺技术进行研...

As Ion Implantation Technology for LWIR HgCdTe Infrared Detector

The p-on-n HgCdTe infrared detector has advantages of long minority carrier life, low dark current, high R₀A product, and is an important device structure in the development of high-temperature detectors along with long wavelength infrared (LWIR) and very LWIR(VLWIR) detectors. However, there are few local reports on arsenic-implanted doped p-on-n long-wave HgCdTe detectors. To meet the urgent application requirements of high-performance long-wave detectors in the military and aerospace fields, studies have focused on long-wavelength p-on-n HgCdTe infrared detector annealing technology for As ion implantation. Secondary ion mass spectrometry(SIMS) was used to analyze the distribution of As ion concentration after implantation and annealing, and a semiconductor parameter tester was used to characterize the I-V characteristics of the pn junction. The results show that under mercury-rich conditions at 430℃ for 0.5 h and at 240℃ for 20 h, the As was activated. Further, the As implanted long-wavelength 15-μm 640×512 p-on-n HgCdTe infrared focal plane detector was successfully fabricated, and the operable pixel factor of the detector was greater than 99.7%. This research is of great significance for the fabrication of LWIR and VLWIR mercury cadmium telluride p-on-n focal plane detectors.