| 2.4GHz CMOS高线性功率放大器 |
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| 引用本文： | 付健,黄煜梅,洪志良.2.4GHz CMOS高线性功率放大器[J].固体电子学研究与进展,2011,31(3):240-244. |
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| 作者姓名： | 付健 黄煜梅 洪志良 |
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| 作者单位： | 复旦大学专用集成电路与系统国家重点实验室,上海,201203 |
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| 基金项目： | 国家高科技研究发展计划(863计划)资助项目 |
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| 摘 要： | 采用A类与B类并联的结构,设计了一种2.4GHz高线性功率放大器.输入信号较小时,A类放大器起主要作用;随着输入信号的增大,B类放大器起的作用越来越明显,来补偿A类的压缩,由此显著提高了放大器的线性度.电路主体为共栅管采用自偏置方法的共源共栅结构,提升了功放大信号工作时的可靠性.电路采用中芯国际0.13 μmCMOS工...
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| 关 键 词： | 功率放大器 A/B类 自偏置 线性度 |
A 2.4 GHz CMOS High Linear Power Amplifier |
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| FU Jian,HUANG Yumei,HONG Zhiliang.A 2.4 GHz CMOS High Linear Power Amplifier[J].Research & Progress of Solid State Electronics,2011,31(3):240-244. |
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| Authors: | FU Jian HUANG Yumei HONG Zhiliang |
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| Abstract: | A 2.4 GHz high linear power amplifier(PA)with a parallel class A&B structure is presented.The class A amplifier is the primary contributor for the transconductance when the input power is low,and the class B amplifier will be the primary contributor at high power levels. As a result,the class B amplifier can compensate for the compression of the class A amplifier, which can improve the linearity significantly.The cascode transistors are self-biased to improve the reliability.The PA was fabricated in a 0.13μm CMOS process.All the devices are on chip except the input/output matching network and the baluns.Measurement results show that the power gain is 9.6 dB and the output power at the 1 dB compression point is larger than 10.6 dBm under a single supply voltage of 3.3 V.The measured IMD3 is -40 dBc at around 0.3 dBm output power(one-tone each)in two-tone test.The die size is 1.5mm×1mm. |
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| Keywords: | power amplifier class A/B self-biased linearity |
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