Characterization of MIS structure coplanar transmission lines forinvestigation of signal propagation in integrated circuits

A full-wave analysis of metal-insulator-semiconductor (MIS) structure micron coplanar transmission lines on doped semiconductor substrates is carried out using a finite-difference time-domain approach. Metal conductor loss is taken into account in the analysis. Line parameters and electromagnetic field distributions are calculated over a wide frequency range involving slow-wave and dielectric quasi-transverse-electromagnetic mode limits. Measurements of these line parameters, varying substrate resistivity from 1 to 1000 Ω-cm, in the frequency range up to 40 GHz are also presented, and these agree with the analysis quite well. On the basis of these results, an equivalent circuit line model is induced and some considerations on the relationship between line structure and properties made