Effects of deep subsurface damages on surface nanostructure formation in laser recovery of grinded single-crystal silicon wafers |
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| Affiliation: | 1. Dipartimento di Fisica “Ettore Pancini”, Università di Napoli Federico II, Complesso Universitario di Monte S. Angelo, Via Cintia, I-80126 Napoli, Italy;2. CNR-SPIN, UOS Napoli, Complesso Universitario di Monte S. Angelo, Via Cintia, I-80126 Napoli, Italy;3. Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology (FORTH), N. Plastira 100, Vassilika Vouton, 70013 Heraklion, Crete, Greece;4. Materials Science and Technology Department, University of Crete, 71003 Heraklion, Greece;1. Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian, 116024, China;2. Beijing Institute of Aerospace Control Device, Beijing, 100854, China;1. School of Mechanical and Precision Instrument Engineering, Xi''an University of Technology, Xi’an, 710048, China;2. State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049, China;3. Department of Design, Manufacture and Engineering Management, University of Strathclyde, Glasgow, G1 1JX, United Kingdom;1. Graduate School of Science and Technology, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama, 223-8522, Japan;2. READ Co., Ltd., 144-7, Tateuchi, Ohkuma Usibukuro, Watari-cho, Miyagi, 989-2302, Japan;3. Department of Mechanical Engineering, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama, 223-8522, Japan |
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| Abstract: | A nanosecond pulsed Nd:YVO4 laser was irradiated on a boron-doped single-crystal silicon wafer after rough and fine grinding processes to recover the grinding-induced subsurface damages. The surface topography of samples was investigated by using a white-light interferometer, a scanning electron microscope, and an atomic force microscope; while the crystallinity was analyzed by a laser micro-Raman spectrometer. It was found that surface nanostructures were generated by the Mullins-Sekerka instability, which remained on the surface under recoil pressure and surface tension. The rough grinding-induced deep subsurface damages influenced the interface instability between liquid and solid silicon during recrystallization process. By increasing pulse width and decreasing laser peak irradiance, the subsurface damage was recovered and a flat surface with surface roughness of ~1 nm Sa was obtained. This study reveals important correlations among grinding-induced latent subsurface defects, laser peak irradiance and nanoscale surface topography formation in laser recovery, which contributes to high quality silicon wafer manufacturing. |
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| Keywords: | single-crystal silicon Laser recovery Nanodot structure Subsurface damage Latent defect |
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