| GaAs／GaxAl1—xAs异质结的调制反射光谱研究 |
| |
| 引用本文： | 沈学础,章灵军.GaAs／GaxAl1—xAs异质结的调制反射光谱研究[J].红外与毫米波学报,1993,12(5):363-370. |
| |
| 作者姓名： | 沈学础 章灵军 |
| |
| 作者单位： | 中国科学院上海技术物理研究所，中国科学院上海技术物理研究所，中国科学院上海冶金研究所 红外物理国家实验室，上海 200083 上海大连路1607号，200092.，红外物理国家实验室，上海 200083，上海 200051 |
| |
| 摘 要： | 用光调制光谱方法研究了逐层腐蚀的ＧａＡＳ／Ｇａ１－ｘＡｌｘＡｓ异质结，发现不同工的ＧａＡｓ复盖层对异质结表面层电子能带有很大影响。由ＧａＡｓ带间跃迁的Ｆｒａｎｚ－Ｋｅｌｅｙｓｈ效应计算出表面层表面电场随外延层的变薄而增大，并计算出表面费密以级与导带底的距离ｆ＝０．２７（０．０３）ｅＶ，通过对Ｇａ１－ｘＡｌｘＡｓ调制光谱分析，发现表面复盖层对Ｇａ１－ｘＡｌｘＡｓ层的调制光谱线形有调节作用，不同厚度的
|
| 关 键 词： | 异质结 调制光谱 能带结构 砷化镓 |
STUDY OF PHOTOREFLECTANCE SPECTROSCOPY ON GaAs/GaAlAs HETEROJUNCTION |
| |
| ZHANG LINGJUN,SHEN XUECHU.STUDY OF PHOTOREFLECTANCE SPECTROSCOPY ON GaAs/GaAlAs HETEROJUNCTION[J].Journal of Infrared and Millimeter Waves,1993,12(5):363-370. |
| |
| Authors: | ZHANG LINGJUN SHEN XUECHU |
| |
| Abstract: | The GaAs/GaAlAs heterojunctions with different thicknesses of cap layer were investigated by the use of photoreflectance (PR) spectroscopy. By analyzing the Franz-Keldysh Oscillation (FKO) in PR spectrum, it was found that the thickness of cap layer would influence the surface band structure of heterojunction, and the surface field was increased with the decrease of thickness of cap layer. It was also found that the PR lineshape would rotate with the varying of the thickness of cap layer. This is coincident with the theoretical calculation while considering the interference effect between different layers. |
| |
| Keywords: | heterojunction photoreflectance Fermi level photogenerated voltage |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《红外与毫米波学报》浏览原始摘要信息 |
|
点击此处可从《红外与毫米波学报》下载全文 |
