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Electrochemical solar cells with layer-type semiconductor anodes. Performance of n-MoSe2 cells
Authors:G. Razzini  M. Lazzari  L.Peraldo Bicelli  F. Levy  L. De Angelis  F. Galluzzi  E. Scafè  L. Fornarini  B. Scrosati
Affiliation:Centro Studio Processi Elettrodici del C.N.R., Polytechnic of Milan, Milan Italy;Laboratoire de Physique Appliquée, Ecole Polytechnique Fédérale de Lausanne, Lausanne Switzerland;Laboratori di Ricerche di Base, Assoreni, Monterotondo, Rome Italy;Istituto di Chimica Fisica, University of Rome, Rome Italy
Abstract:The output characteristics and the long-term performances of n-MoSe2 (I?, I2) electrochemical solar cells have been investigated. It has been confirmed that, by analogy with other layer-type, d-band transition metal dichalcogenide systems, the surface state of the semiconductor plays a key role in the behaviour of the cell. With ‘smooth’ crystal samples, fill factor and efficiency values of the order of 0.6 and 6%, respectively, have been obtained under AM1 illumination. Such performances are, however, drastically reduced if ‘irregular’ crystal samples are used.Control of these undesirable surface state effects has been attempted by chemical treatments specific to the unsaturated transition metal atoms exposed to the electrolyte at the edge sites. Finally, the stability of n-MoSe2 I?, I2) cells under long time operation, has also been evaluated.
Keywords:To whom correspondence should be addressed.
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