Comments on static negative resistance in avalanching silicon p+-i-n+junctions

The dependence of calculated static space-charge-induced negative resistance, in avalanching silicon diodes, upon the form of the ionization rate function is investigated. It is shown that the conversion efficiency calculated using a commonly employed function for the ionization rate is greatly overestimated. It is concluded that the mechanism of static space-charge-induced negative resistance is not the origin of high efficiency modes of oscillation.