1/f noise in GaAs filaments |
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Authors: | Tacano M Sugiyama Y |
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Affiliation: | Electrotech. Lab., Ibaraki; |
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Abstract: | A typical 1/f noise is excited in GaAs filament with the Hooge noise parameter of about αH=2×10-3 . The noise level increases in proportion to the square of the terminal voltage, and decreases approximately in inverse proportion to the total number of carriers within the device. A transition from the typical 1/f noise characteristics to the diffusion noise characteristics of MESFETs was observed when the electric field was increased above 1 kV/cm. The noise parameters were also investigated as a function of the device width between 2 and 200 μm. Deep levels within the n-GaAs active layer and the high electric field are the main factors of the nonideal 1/f characteristics |
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