Novel Er-doped SiC/SiO2 nanocomposites: Synthesis via polymer pyrolysis and their optical characterization |
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| Affiliation: | 1. Dipartimento di Ingegneria dei Materiali, Università di Trento, Via Mesiano 77, I-38050 Trento, Italy;2. CNR-IFN, CSMFO Group, Via Sommarive 14, I-38050 Trento, Italy;3. Departamento de Química, Faculdade de Filosofia Ciências e Letras de Ribeirão, Preto-FFCL RP, Universidade de São Paulo, USP, Av. Bandeirantes, 3900, CEP, 14040901 Ribeirão Preto, SP, Brasil;1. Helmholtz–Institut für Strahlen- und Kernphysik, Universität Bonn, 53115 Bonn, Germany;2. II. Physikalisches Institut, Universität Gießen, 35392 Gießen, Germany;3. Petersburg Nuclear Physics Institute, Gatchina, 188300, Russia;4. Kernfysisch Versneller Instituut, Groningen, The Netherlands;5. Physikalisches Institut, Universität Bonn, 53115 Bonn, Germany;6. Department of Physics, Florida State University, Tallahassee, FL 32306, USA;7. Departement Physik, Universität Basel, 4056 Basel, Switzerland;1. University of Bergen, Institute of Physics and Technology, Allégaten 55, 5007 Bergen, Norway;2. Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy;3. Istituto Nazionale di Fisica Nucleare, Sez. di Milano, Via Celoria 16, 20133 Milano, Italy;4. European Organisation for Nuclear Research, Physics Department, 1211 Geneva 23, Switzerland;5. Institute for Nuclear Research of the Russian Academy of Sciences, Moscow 117312, Russia;6. University of Brescia, Department of Mechanical and Industrial Engineering, Via Branze 38, 25133 Brescia, Italy;7. Istituto Nazionale di Fisica Nucleare, Sez. di Pavia, Via Agostino Bassi 6, 27100 Pavia, Italy;8. Kirchhoff Institute for Physics, Im Neuenheimer Feld 227, 69120 Heidelberg, Germany;9. Department of Physics, University of Trento, via Sommarive 14, 38123 Povo, Trento, Italy;10. INFN-TIFPA, via Sommarive 14, 38123 Povo, Trento, Italy;11. Laboratoire Aimé Cotton, CNRS, Université Paris Sud, ENS Cachan, Bâtiment 505, Campus d׳Orsay, 91405 Orsay Cedex, France;12. University of Insubria, Dipartimento di Scienza ed Alta Tecnologia, via Valleggio 11, Como, Italy;13. University of Zurich, Physics Institute, Winterthurerstrasse 190, 8057 Zurich, Switzerland;14. Istituto Nazionale di Fisica Nucleare, Sez. di Genova, Via Dodecaneso 33, 16146 Genova, Italy;15. University of Genoa, Department of Physics, Via Dodecaneso 33, 16146 Genova, Italy;p. University of Milano, Department of Physics, Via Celoria 16, 20133 Milano, Italy;q. Max Planck Institute for Nuclear Physics, Saupfercheckweg 1, 69117 Heidelberg, Germany;r. School of Physics and Astronomy, University of Manchester, Manchester, United Kingdom;s. University of Liverpool and the Cockroft Institute, Liverpool, Sci-Tech Daresbury, Keckwick Lane, Daresbury, Warrington WA4 4AD, United Kindom;t. University of Oslo, Department of Physics, Sem Sælandsvei 24, 0371 Oslo, Norwayy;u. Stefan Meyer Institute for Subatomic Physics, Austrian Academy of Sciences, Boltzmanngasse 3, 1090 Vienna, Austria;v. University of Pavia, Department of Nuclear and Theoretical Physics, Via Bassi 6, 27100 Pavia, Italy;w. Joint Institute for Nuclear Research, 141980 Dubna, Russia;x. Istituto Nazionale di Fisica Nucleare, Sez. di Padova, Via Marzolo 8, 35131 Padova, Italy;y. Claude Bernard University Lyon 1, Institut de Physique Nucléaire de Lyon, 4 Rue Enrico Fermi, 69622 Villeurbanne, France;z. Czech Technical University in Prague, FNSPE, Břehová 7, 11519 Praha 1, Czech Republic;11. University of Bologna, Department of Physics, Via Irnerio 46, 40126 Bologna, Italy;1. Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento, Italy;2. INFN TIFPA, Via Sommarive 14, I-38123 Trento, Italy;3. Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg, Germany;4. Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive 18, I-38123 Trento (TN), Italy |
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| Abstract: | Erbium activated SiC/SiO2 nanocomposites doped with Er3+ concentrations ranging from 1 to 4 mol% were prepared by pyrolysis of sol–gel derived precursors. The gels were obtained from modified silicon alkoxides containing Si–CH3 and Si–H groups. Thin discs obtained from the monolithic xerogels were pyrolyzed in an alumina tubular furnace in flowing Ar (100 ml/min) at 800, 1000, 1200 and 1300 °C. The samples were investigated by absorption and photoluminescence spectroscopies. Emission in the C-telecommunication band was observed at room temperature for all the samples upon continuous-wave excitation at 980 or 514.5 nm. The shape of the emission band corresponding to the 4I13/2 → 4I15/2 transition is found to be independent both on Erbium content and excitation wavelength, with a Full Width Half Maximum (FWHM) of 48 nm. By increasing the pyrolysis temperature the intensity of the luminescence increases and the electronic bandgap energy decreases. |
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