Influence of cathode temperature on gas discharge and growth of diamond films in DC-PCVD processing |
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| Affiliation: | 1. State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Department of Physics, Dalian University of Technology, 116024, PR China;2. State Key laboratory of Superhard Materials, Jilin University, 130023, PR China;3. College of Physics, Jilin University, 130023, PR China;1. Department of Chemistry, University of the Western Cape, Private Bag X17, Bellville, Western Cape 7535, South Africa;2. 65 South Harrison St, East Orange, New Jersey, JN 07018, USA;3. Department of Physics, University of the Free State (Qwaqwa Campus), Private Bag X13, Phuthaditjhaba 9866, South Africa;1. Department of Materials and Chemical Engineering, Heilongjiang Institute of Technology, Harbin 150050, China;2. State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China;3. College of Engineering and Technology, Northeast Forestry University, Harbin 150040, China;4. School of Materials Science and Engineering, Jiamusi University, Jiamusi 154007, China |
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| Abstract: | In this paper, a novel direct current glow discharge plasma chemical vapor deposition (DC-PCVD) process, i.e., hot cathode DC-PCVD, is employed to deposit diamond films on molybdenum substrate. Compared with the conventional DC-PCVD method, the hot cathode DC-PCVD process is distinctive for its hot cathode with the temperature ranging from 700 to 1600 °C. Detailed experiments and analyses showed that the cathode temperature plays a key role in the stabilization of gas discharge and growth of diamond films. |
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