Bottom electrode crystallization of PZT thin films for ferroelectric capacitors |
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| Affiliation: | 1. Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791, South Korea;2. The Research Institute for Natural Science, Novel Functional Materials and Devices Lab, Department of Physics, Hanyang University, Seoul 133-791, South Korea;3. Department of Energy Engineering, Hanyang University, Seoul 133-791, South Korea;4. R&D Division, SK Hynix, Kyoungki-do 467-701, South Korea |
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| Abstract: | The bottom electrode crystallization (BEC) method was applied to the crystallization of PZT thin films deposited by laser ablation over Si/SiO2/Ti(Zr)/Pt structures, with the platinum films being deposited at two different temperatures. The results were compared with those obtained by rapid annealing with halogen lamps and furnace annealing. PZT films crystallized over Pt made at lower temperature with Ti adhesion layers tend to have a (1 1 1) preferential orientation, while those deposited on platinum made at higher temperature tend to have a (1 0 0)/(1 1 1) mixed orientation. When Zr adhesion layers are used, the PZT films crystallized over Pt have a preferential (1 0 0) orientation, except for films deposited over Pt made at 500 °C and crystallized with a high heating rate. The ferroelectric properties of the films crystallized with the BEC method are good, being similar to those obtained with the other crystallization methods using the same parameters. |
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