Electrical characterization of p-type cubic boron nitride/n-type silicon heterojunction diodes |
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| Affiliation: | 1. Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, South Korea;2. Department of Energy and Materials Engineering, Dongguk University, Seoul 100-715, South Korea;3. Department of Physics, Hanyang University, Seoul 133-791, South Korea;1. Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826 Republic of Korea;2. Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229 Republic of Korea;3. Sigetronics Inc, Jeonbuk 55314 Republic of Korea;1. School of Sciences, Beihua University, Jilin 132013, China;2. School of Materials Science and Engineering, Beihua University, Jilin 132013, China;3. School of Materials Science and Engineering, Anhui University of Science and Technology, Huainan 232001, China;4. State Key Laboratory of Radiation Medicine and Protection, Soochow University, Suzhou 215123, China |
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| Abstract: | Nanocrystalline p-type cubic boron nitride/n-type silicon diodes with three different interfaces were fabricated by plasma chemical vapor deposition and ultrahigh-vacuum bias sputter deposition. When the interface contained a t-BN layer of 25 nm thickness or less, rectification ratios as high as 4×104 at room temperature and 10 at 570 K were observed. Even when the interface contained a 1–2-nm-thick insulating layer, diode characteristics were also observed but with a lower rectification ratio of 5×102. The carrier conduction at the interface was characterized primarily by thermal excitation, where barrier height altered with bias voltage similar to the case of an ideal n-Si/p-c-BN heterojunction in the temperature range of 300–570 K. |
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