Influence of low-temperature AlGaN intermediate multilayer structures on the growth mode and properties of GaN |
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| Affiliation: | 1. Department of Materials Science and Engineering, Feng Chia University, 100 Wen-hwa Road, Taichung 407, Taiwan, Republic of China;2. Institute of Opto-Mechatronics, National Chung Cheng University, 160 San-Hsing, Ming-Hsiung, Chia-Yi 621, Taiwan, Republic of China;1. College of Material Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, China;2. International Center for Material Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan;3. Research Center for Functional Materials, National Institute for Materials Sciences, Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan;4. Amano-Koide Collaborative Research Lab, National Institute for Materials Science, (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan;1. Lawrence Livermore National Laboratory, United States;2. Department of Materials Science and Engineering, University of California, Davis, United States;1. Voronezh State University, University sq.1, Voronezh, 394006, Russia;2. Ural Federal University Named After the First President of Russia B. N. Yeltsin, Mir Av., Yekaterinburg, 620002, Russia;3. Federal State-Financed Institution of Higher Education and Science “St. Petersburg National Research Academic University of the Russian Academy of Sciences”, 8 Khlopin St., Building 3, lit. A, St. Petersburg, Russia;4. Saint-Petersburg State University, 7/9 Universitetskaya Nab., St. Petersburg, 199034, Russian Federation |
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| Abstract: | GaN growth on the low-temperature (LT) AlGaN intermediate multilayer-coated GaN film was conducted using metal alkyls (trimethylgallium (TMG) and/or trimethylaluminum (TMA)) and ammonia in an inductively heated quartz reactor operated at atmospheric pressure. LT-AlGaN multilayers having certain Al contents and layer thicknesses were found to induce island growth of GaN based upon the observations of scanning electron microscopy (SEM). Cross-sectional transmission electron microscopic (TEM) studies show that the use of LT-AlGaN intermediate multilayers blocks threading dislocations (TDs) coming from the underlying GaN film very efficiently, and thereby results in great reduction of TD density in the GaN islands. The island growth nature of GaN is believed to originate from the lattice mismatch between GaN and LT-AlGaN multilayer structures. These nearly TD-free GaN islands exhibit enhanced room temperature (RT) near band-edge photoluminescence (PL) emissions. |
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