Electrical characteristics of oxynitride gate dielectrics prepared by rapid thermal processing of LPCVD SiO/sub 2/ films |
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| Authors: | Ting W. Li P.C. Lo G.Q. Kwong D.L. |
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| Affiliation: | Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA; |
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| Abstract: | High-quality oxynitride gate dielectrics have been fabricated by rapid thermal processing of LPCVD SiO/sub 2/ in reactive ambients (NH/sub 3/ and O/sub 2/). The as-deposited CVD oxides of 200 AA in thickness show no early breakdowns. The breakdown distribution becomes tighter, the interface state density is reduced, and the interface endurance property is improved after rapid thermal nitridation and reoxidation.<> |
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