Thermal impedance of VCSELs with AlOx-GaAs DBRs |
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Authors: | MacDougal MH Geske J Chao-Kun Lin Bond AE Dapkus PD |
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Affiliation: | Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA; |
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Abstract: | The authors have measured the thermal impedance of vertical-cavity surface-emitting lasers (VCSELs) with oxide/GaAs DBRs and shown that it is comparable to that of VCSELs with all-semiconductor DBRs. A VCSEL with an 8-μm oxide aperture shows a thermal impedance of 2.8°C/mW. By varying the aperture size, the thermal conductance of the material below the active area is 0.255 W/cm°C. These results demonstrate that the oxide is not a major barrier to heat transport out of the active region |
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