Characteristics of GaAs solar cells on Ge substrate with a preliminary grown thin layer of AlGaAs |
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Authors: | Ken Takahashi Shigeki Yamada Tsunehiro Unno Shoji Kuma |
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Affiliation: | Advanced Research Center, Hitachi Cable, Ltd., 3550 Kidamari-cho, Tsuchiura-shi, Ibaraki-ken 300, Japan |
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Abstract: | Characteristics of GaAs solar cell on Ge substrate with a new buffer layer structure is reported. The buffer layer structure, which consisted of a preliminarily grown thin layer of A1xGa1?xAs and a 1 μm thick GaAs layer, was designed to obtain a high quality GaAs layer on Ge substrate by metalorganic chemical vapor deposition (MOCVD). Performance of a GaAs solar cell fabricated on Ge substrate with the buffer layer structure was compared with that fabricated on Ge substrate with a conventional GaAs buffer layer and also that fabricated on GaAs substrate. A conversion efficiency of 23.18% (AM1.5G) was successfully obtained for the cell fabricated on Ge substrate with the new buffer layer structure, while it was 20.92% for the cell fabricated on Ge substrate with the conventional GaAs buffer layer. Values of Voc and Jsc, for the cell fabricated on Ge substrate with the new buffer layer structure were approximately comparable to those of a 25.39% efficiency GaAs solar cell fabricated on GaAs substrate. |
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Keywords: | GaAs solar cells Ge substrate AlGaAs |
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