| GaN肖特基SIT的Monte Carlo模拟 |
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| 引用本文： | 郭宝增,师建英,宫娜.GaN肖特基SIT的Monte Carlo模拟[J].固体电子学研究与进展,2007,27(1):13-17. |
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| 作者姓名： | 郭宝增 师建英 宫娜 |
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| 作者单位： | 河北大学电子信息工程学院,河北,保定,071002;河北大学电子信息工程学院,河北,保定,071002;河北大学电子信息工程学院,河北,保定,071002 |
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| 摘 要： | 用全带多粒子Monte Carlo模拟方法研究了GaN基肖特基势垒静电感应晶体管(SIT)的特性,给出了器件的电势、电场强度和电子浓度分布的Monte Carlo模拟结果。模拟得到的SIT输出特性曲线呈现非饱和特性,即类三极管特性。当VGS=0,VDS=35 V时,漏源电流为47 A/cm,跨导为300 mS/mm,电流截至频率为150 GHz。结果表明该器件具有大电流、高跨导和高频工作的潜力。
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| 关 键 词： | 蒙特卡罗方法 静电感应晶体管 氮化镓 |
| 文章编号： | 1000-3819（2007）01-013-05 |
| 收稿时间： | 2005-04-22 |
| 修稿时间： | 2005-07-04 |
Simulation Studies of GaN-based Schottky Barrier SIT by Monte Carlo Approach |
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| GUO Baozeng,SHI Jianying,GONG Na.Simulation Studies of GaN-based Schottky Barrier SIT by Monte Carlo Approach[J].Research & Progress of Solid State Electronics,2007,27(1):13-17. |
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| Authors: | GUO Baozeng SHI Jianying GONG Na |
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| Abstract: | We studied properties of GaN-based Schottkey barrier Static Induction Transistor(SIT) by the full-band ensemble Monte Carlo approach.The distributions of the electric potential,electric field,and electron concentration in SIT are presented.The output characteristics obtained with Monte Carlo approach show non-saturated characteristics,that is,characteristics of triode-like.At VGS=0 V and VDS=35 V,the drain-source current is 47 A/cm,transconductance is 300 ms/mm,and current cutoff frequency is 150 GHz.The simulation results indicate that GaN SITs have a potential for applications in high current,high transconductance,and high frequency. |
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| Keywords: | Monte Carlo static induction transistor GaN |
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