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Investigation of the current collapse induced in InGaN back barrier AIGaN/GaN high electron mobility transistors |
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| Authors: | Wan Xiaojia Wang Xiaoliang Xiao Hongling Feng Chun Jiang Lijuan Qu Shenqi Wang Zhanguo Hou Xun |
| Affiliation: | [1]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China [2]Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China [3]ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, Beijing 100083, China |
| Abstract: | A1GaN/GaN HEMT InGaN current collapse surface states |
| Keywords: | A1GaN/GaN HEMT InGaN current collapse surface states |
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