A monolithic GaInAsN vertical-cavity surface-emitting laser for the 1.3-/spl mu/m regime |
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| Authors: | Fischer M Reinhardt M Forchel A |
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| Affiliation: | Technische Phys., Wurzburg Univ., Germany; |
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| Abstract: | An all-epitaxial GaInAsN vertical-cavity surface-emitting laser for room-temperature (RT) emission at 1.3 /spl mu/m was developed by solid-source molecular beam epitaxy using a plasma source for nitrogen activation. RT photopumped operation is demonstrated at a wavelength of 1283 nm. Stimulated emission was observed up to a record high temperature of 143/spl deg/C, resulting in an emission wavelength of 1294 nm. |
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