Effect of NO annealing conditions on electrical characteristics of n-type 4H-SiC MOS capacitors |
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Authors: | H. -F. Li S. Dimitrijev D. Sweatman H. B. Harrison |
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Affiliation: | (1) School of Microelectronic Engineering, Griffith University, 4111 Nathan, QLD, Australia |
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Abstract: | This paper presents the results of the effect of NO annealing temperature and annealing time on the interfacial properties of n-type 4H-SiC MOS capacitors. The interface trap density measured by conductance technique at 330°C decreases as NO annealing temperature increases from 930°C to 1130° and annealing time is extended from 30 min. to 180 min. The changes in effective oxide charge between room temperature and high temperature are calculated and used to compare different n-type 4H-SiC MOS capacitors. Higher NO annealing temperature and longer NO annealing time decrease the change in effective oxide charge, which is consistent with the NO annealing temperature/time dependence of interface trap density measured by conductance technique. However, NO annealing temperature has more pronounced influence on the SiO2/SiC interface than NO annealing time. |
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Keywords: | SiO2/SiC interface effective oxide charge NO anneal |
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