A power amplifier with efficiency improved using defected groundstructure |
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| Authors: | Jong-Sik Lim Ho-Sup Kim Jun-Seek Park Dal Ahn Sangwook Nam |
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| Affiliation: | Appl. Electromagnetics. Lab., Seoul Nat. Univ. ; |
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| Abstract: | The authors report the effects of defected ground structure (DGS) on the output power and efficiency of a class-A power amplifier. In order to evaluate the effects of DGS on the efficiency and output power, two class-A GaAs FET amplifiers have been measured at 4.3~4.7 GHz. One of them has a 50 Ω microstrip line with DGS at the output section, while the other has only 50 Ω straight line. It is shown that DGS rejects the second harmonic at the output and yields improved output power and power added efficiency by 1~5% |
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