Electrical properties of hydrogenated InSe crystals |
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| Authors: | A V Zaslonkin V M Kaminskii Z D Kovalyuk I V Mintyanskii M V Tovarnitskii |
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| Affiliation: | (1) Frantsevich Institute of Materials Science Problems (Chernovtsy Branch), National Academy of Sciences of Ukraine, ul. Vil’de 5, Chernovtsy, 58001, Ukraine |
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| Abstract: | We have studied the effect of hydrogenation on the electrical properties of InSe layered crystals and their anisotropy. Hydrogenation has been shown to reduce the in-plane electron mobility in InSe and to raise its in-plane electrical conductivity and electron concentration. The decrease in anisotropy upon InSe hydrogenation is due to the marked rise in out-of-plane conductivity. |
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