NVM characteristics of single-MOSFET cells using nitride spacers with gate-to-drain NOI |
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| Authors: | Chien-Sheng Hsieh Pai-Chu Kao Chia-Sung Chiu Chih-Hsueh Hon Chen-Chia Fan Wei-Chain Kung Zih-Wun Wang Jeng ES |
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| Affiliation: | Dept. of Electron. Eng., Chun-Yuan Christian Univ., Chun-Li, Taiwan; |
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| Abstract: | This work presents the characteristics of a two-bit-per-cell charge-trapping nonvolatile memory (NVM) device by using gate-to-drain nonoverlapped implanted (NOI) n-MOSFETs. Hot carriers are generated in NOI devices and injected into the silicon nitride spacers. The characteristics of this potential single-transistor NVM cell, including two-bit operation, programming and erasing characteristics, are investigated. Their stability and reliability characteristics such as retention, disturbance and cycling are also evaluated. |
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