| 定域无缺陷SOI的制备 |
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| 引用本文： | 张鹏飞 钱佩信. 定域无缺陷SOI的制备[J]. 微细加工技术, 1992, 0(3): 21-24 |
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| 作者姓名： | 张鹏飞 钱佩信 |
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| 作者单位： | 清华大学微电子学研究所，清华大学微电子学研究所 北京 100084，北京 100084 |
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| 摘 要： | 两种行之有效的晶粒间界限制技术:热沉结构和硅槽结构使区熔再结晶SOI实现定域无缺陷,这是采用区熔技术制备SOI的技术关键和难点所在。本文讨论了两种结构限制晶界的机理。
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| 关 键 词： | SOI 晶粒间界 制备 半导体材料 |
FABRICATION OF SOI WITH LOCALIZED DEFECTLESS |
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| Zhang Pengfei Qian Peixin. FABRICATION OF SOI WITH LOCALIZED DEFECTLESS[J]. Microfabrication Technology, 1992, 0(3): 21-24 |
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| Authors: | Zhang Pengfei Qian Peixin |
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| Affiliation: | Institute of Microelectronics Tsinghua University |
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| Abstract: | In this paper, such effective techniques as Heat Sink structure and Grooved structure have been proposed to localize grain-boundaries during Zone-Melting -Recrystallization(ZMR).These techniques are the key points of ZMR-SOI technology. The mechanisms of defects localization of the two structures have been reviewed. |
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| Keywords: | ZMR SOI grain-boundary |
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