溅射功率和气氛对Sialon薄膜，介电性能的影响

采用射频磁控溅射法分别在Ar/N2和Ar/O2气氛中制备了厚度为80～300nm的SiMon薄膜,研究了沉积功率对SiMon薄膜的介电性能的影响.发现在Ar/N2气氛中沉积的Sialon薄膜具有较高的介电常数,漏电流密度和介电损耗也稍大.在Ar/N2气氛下沉积的SiMon薄膜的介电常数在4.8～8.5之间,反映介电损耗的参数△Vy在0.010～0.045V之间,在50MV/m直流电场下的正、反向漏电流密度在10-10～10-8数量级,击穿场强在201～476 MV/m;在Ar/O2气氛下沉积的SiMon薄膜的介电常数在3.6-5.3之间,反映介电损耗的参数△Vy小于0.01V,在50MV/m直流电场下的正、反向漏电流密度在10-10～10-9数量级,击穿场强在260～305 MV/m之间.该绝缘薄膜应用于以Zn2SixGe1-xO4:Mn为发光层的无机EL显示器件和以IGZO为有源层的TFT器件中获得了较好的结果.

The Effect of RF Power and Working Gases on the Dielectric Properties of Sialon Thin Films

Sialon thin films with thickness in the range of 80-300nm were prepared both at Ar/N2 and Ar/O2 ambience, the influence of sputter power on the dielectric performance was investigated. It was found that sialon thin films deposited in Ar and N2 atmosphere have higher relative dielectric constant, dielectric dissipation and leakage current density than those deposited in Ar and O2 atmosphere. For the sialon thin films fabricated with Ar and N2 mixed gas, the relative dielectric constant, dissipation parameter ΔVy, the forward and reverse leakage current density at a field strength of 50 MV/m, and the field breakdown strength were followed in range of 4.8~8.5, 0.010~0.045V, 10-10~10-8A and 201~476 MV/m,respectively; While for those fabricated with Ar and O2 mixed gas, the relative dielectric constant, ΔVy, the forward and reverse leakage current density, and the field breakdown strength were between 3.6-5.3, 0.002-0.010 V, 10-10~10-9A, and 260~305 MV/m,respectively. The Zn2SixGe1-xO4:Mn TFEL devices and thin film transistor with IGZO active layer wherein sialon thin films were used as insulator or buffer layer have substantially high breakdown strength and low leakage current density.