| 功率RF LDMOS的关键参数研究 |
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| 引用本文： | 黄晓兰,吴德馨,张耀辉,李科,王立新.功率RF LDMOS的关键参数研究[J].半导体学报,2006,27(13):266-270. |
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| 作者姓名： | 黄晓兰 吴德馨 张耀辉 李科 王立新 |
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| 作者单位： | 中国科学院微电子研究所，北京 100029;中国科学院微电子研究所，北京 100029;中国科学院微电子研究所，北京 100029;中国科学院微电子研究所，北京 100029;中国科学院微电子研究所，北京 100029 |
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| 摘 要： | 在功率RF LDMOS器件中，击穿电压、截止频率fT和导通电阻Ron是器件性能的关键参数，为提高这几个器件性能参数可采取的各种措施又往往是互相矛盾和相互制约的. 文中研究了几个关键参数之间的关系和优化方案，以及国际上在这方面所开展的研究和取得的进展，为进一步的研究和探索提供参考.
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| 关 键 词： | RF LDMOS 击穿电压 截止频率 多晶硅氧化 |
Research of the Critical Parameters of Power RF LDMOS |
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| Huang Xiaolan,Wu Dexin,Zhang Yaohui,Li Ke and Wang Lixin.Research of the Critical Parameters of Power RF LDMOS[J].Chinese Journal of Semiconductors,2006,27(13):266-270. |
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| Authors: | Huang Xiaolan Wu Dexin Zhang Yaohui Li Ke and Wang Lixin |
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| Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China |
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| Abstract: | Breakdown voltage,cutoff frequency fT and Ron are key parameters of power RF LDMOS devices.The measures of enhancing these characteristics are usually conflicting and restricting each other.The relations of these parameters are studied and the optimizing schemes are discussed.The progress and achievement in the field are also presented. |
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| Keywords: | :RF LDMOS breakdown voltage cut-off frequency polysilicon oxidation |
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