Reactive ion etching of PECVD silicon nitride in SF6 plasma |
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Authors: | Fl via R. de Almeida, R.Katsuhiro Yamamoto,Homero S. Maciel |
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Affiliation: | Laboratório de Sistemas Integráveis / PEE / EPUSP, Av. Prof. Luciano Gualberto, 158 trav. 3, 05508, São Paulo, Brazil |
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Abstract: | The reactive ion etching of PECVD silicon nitride thin films has been investigated using SF6 plasma. Effects of variations of process parameters such as pressure (50–350 mTorr), RF power (50–250 W), gas flow rate (3–130 sccm) and additions of O2 and He (0–50%) in SF6, on the PECVD silicon nitride etch rate and selectivity to the AZ 1350J photoresist were examined. An etch rate of 1 μm/min has been obtained under the condition of 150 mTorr, 100 W and 60 sccm. Experimental results also indicated a maximum etch rate at approximately 30% O2 while addition of He showed only dilution effect. A nitride/photoresist selectivity ranging from 1 to 3:1 has been obtained. |
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