| 应力对双极型晶体管参数性能的影响 |
| |
| 引用本文： | 郦扬成. 应力对双极型晶体管参数性能的影响[J]. 半导体技术, 2009, 34(8). DOI: 10.3969/j.issn.1003-353x.2009.08.009 |
| |
| 作者姓名： | 郦扬成 |
| |
| 作者单位： | 扬州晶新微电子有限公司,江苏,扬州,225003 |
| |
| 摘 要： | 半导体器件和集成电路中存在着两大类应力,提出了应力及其引起的二次缺陷产生的原因、以及如何减小产生的应力和减少二次缺陷的措施,分析了应力和二次缺陷对双极型晶体管的参数性能的不同影响,以及如何区分产生的这些影响是由何种应力或二次缺陷引起的办法。指出硅片在高温氧化扩散后的科学的慢降温和低温出炉是减小应力和减少二次缺陷的最主要措施,对提高器件参数性能的水平和一致性、提高合格率等起着很重要的作用。
|
| 关 键 词： | 应力和形变 二次缺陷 慢速降温 |
Effects of Stress on Bipolar Transistor Performance Parameters |
| |
| Li Yangcheng. Effects of Stress on Bipolar Transistor Performance Parameters[J]. Semiconductor Technology, 2009, 34(8). DOI: 10.3969/j.issn.1003-353x.2009.08.009 |
| |
| Authors: | Li Yangcheng |
| |
| Affiliation: | Yangzhou Genesis Microelectronics Co.;Ltd.;Yangzhou 225003;China |
| |
| Abstract: | Two kinds of stress exist in the semiconductor devices and IC.The causes of stress and secondary defects were pointed out,the methods to reduce stress and reduce the secondary defects were given,the effects of stress and secondary defects on bipolar transistor parameters performance were analyzed,the approaches how to distinguish these effects produced by stress or secondary defects were proposed.It is pointed out that after high-temperature oxidation or diffusion of silicon wafer,slow cooling and coming ou... |
| |
| Keywords: | stress and deformation secondary defect slow cooling |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
