Self-aligned AlInAs-GaInAs heterojunction bipolar transistors andcircuits |
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| Authors: | Mishra U.K. Jensen J.F. Rensch D.B. Brown A.S. Stanchina W.E. Trew R.J. Pierce M.W. Kargodorian T.V. |
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| Affiliation: | North Carolina State Univ., Raleigh, NC; |
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| Abstract: | AlInAs-GaInAs heterojunction bipolar transistors (HBTs) and static flip-flop frequency dividers have been fabricated. An ft and an fmax of 49 and 62 GHz, respectively, have been achieved in a device with a 2×5-μm2 emitter. Current-mode logic (CML) was used to implement static divide-by-two and divide-by-four circuits. The divide-by-two circuit operated at 15 GHz with 82-mW power dissipation for the single flip-flop. The divide-by-four circuit operated at 14.5 GHz with a total chip power dissipation of 444 mW |
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