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Structural and photocarrier radiometric characterization of Cux(CdTe)yOz thin films growth by reactive sputtering
Authors:R. Velazquez-Hernandez,I. Rojas-RodriguezJ. Carmona-Rodrí  guez,S. Jimé  nez-SandovalM.E. Rodriguez-Garcia
Affiliation:
  • a División de Investigación y Posgrado, Facultad de Ingeniería, Universidad Autónoma de Querétaro, Cerro de las Campanas S/N, Querétaro, Qro., Mexico, C.P. 76010
  • b Universidad Tecnológica de Querétaro, Av. Pie de la Cuesta S/N, Sn. Pedrito Peñuelas, Querétaro, Qro. Mexico
  • c Centro de Investigación y de Estudios Avanzados del IPN, Unidad Querétaro, Apartado Postal 1-798, Querétaro, Qro., Mexico C.P.76001
  • d Departamento de Nanotecnología, Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, Campus Juriqulla, Apartado Postal 1-1010, Querétaro, Qro. Mexico
  • Abstract:This research presents a structural and photocarrier radiometric (PCR) characterization of Cux(CdTe)yOz thin films grown using reactive radiofrequency co-sputtering. Electronic distribution induced by variations in dopant concentration as a function of the position was studied using photocarrier radiometric images. Optical and structural characterization of these thin films was carried out by using micro Raman spectroscopy and X-ray diffraction. Due to its nondestructive and noncontact characteristics, the PCR is an excellent technique that permits one to obtain details of lateral electronic distribution across the sample. It was found that Cu target power influences the electronic distribution and produces different phases such as Cu2Te and CdO.
    Keywords:Photocarrier radiometric characterization   Sputtering   Quaternary semiconductors   Carrier distribution
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