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| 高掺杂氢化非晶硅薄膜 | |
| 引用本文： | 盛文伟. 高掺杂氢化非晶硅薄膜[J]. 固体电子学研究与进展, 1989, 0(3) |
| 作者姓名： | 盛文伟 |
| 作者单位： | 南京电子器件研究所 |
| 摘 要： | 采用低浓度硅烷,低生长速率,在PECVD系统中制得高掺杂氢化非晶硅(N~+α-Si:H)薄膜,其电导率高达5～36Ω~(-1)cm~(-1)。应用该技术制成了新型二维电子气Si/N~+α-Si∶H异质结双极型晶体管,在硅微波功率异质结双极型晶体管研制上取得重大突破。 |
Heavy Phosphorus-Doped Hydrogenated Amorphous Silicon Films |
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| Abstract: | Utilizing highly hydrogen-diluted silaae and lower growth rate, the heavy phosphorus-doped hydrogeaated amorphous silicoa (N+α-Si:H) films with electrical conductivity as high as 5 -36Ω-1 -cm-1 have been fabricated with PECVD apparatus. A novel 2DEG Si/N+αa-Si:H HBT has been prepared with thess films, which is a breakthrough in the area of the silicon microwave powerPBT. |
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