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The power density giving rise to optical degradation of mirrors in InGaAs/AlGaAs/GaAs-based laser diodes |
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| Authors: | E. Yu. Kotel’nikov A. A. Katsnel’son I. V. Kudryashov M. G. Rastegaeva W. Richter V. P. Evtikhiev I. S. Tarasov Zh. I. Alferov |
| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia;(2) Friederich-Schiller University, Jena, Germany |
| Abstract: | The InGaAs/AlGaAs/GaAs double laser heterostructures of separate confinement with a quantum well were formed by molecular-beam epitaxy. The study of characteristics of laser diodes with a wide contact (100 µm) showed that the power corresponding to the catastrophic degradation of mirrors may attain nearly the highest values ever achieved (20 MW/cm2) that were previously obtained for laser diodes based on InGaAsP/GaAs heterostructures alone. |
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