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Potential of amorphous Mo–Si–N films for nanoelectronic applications |
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| Authors: | M Ylnen H Kattelus A Savin P Kivinen T Haatainen J Ahopelto |
| Affiliation: | a VTT Centre for Microelectronics, P.O. Box 1208, FIN-02044 VTT, Espoo, Finland b Low Temperature Laboratory, Helsinki University of Technology, P.O. Box 2200, FIN-02015 HUT, Espoo, Finland c Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40014, Jyväskylä, Finland |
| Abstract: | The properties of amorphous metallic molybdenum–silicon–nitrogen (Mo–Si–N) films were characterised for use in nanoelectronic applications. The films were deposited by co-sputtering of molybdenum and silicon targets in a gas mixture of argon and nitrogen. The atomic composition, microstructure and surface roughness were studied by RBS, TEM and AFM analyses, respectively. The electrical properties were investigated in the temperature range 80 mK to 300 K. No transition into a superconductive state was observed. Nanoscale wires were fabricated using electron beam lithography with their properties measured as a function of temperature. |
| Keywords: | Amorphous metal films Mictamict alloy Mo–Si–N Temperature coefficient of resistivity Nanoscale wiring |
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