A thorough investigation of hot-carrier-induced gate oxide breakdown in partially depleted N- and P-channel SIMOX MOSFETs |
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| Authors: | Hongxia Liu Yue Hao Jiangang Zhu |
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| Affiliation: | 1. School of Electronics Engineering, KIIT University, Bhubaneswar, 751024, India;2. Institute of Radio Physics and Electronics, University of Calcutta, Kolkata, 700009, India;1. Department of Physics, Yonsei University, Seoul 120-749, Republic of Korea;2. Center of Opto-Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea;1. Department of Electronics Engineering, Institute of Electronics National Chiao-Tung University, Hsinchu 300, Taiwan;2. Department of Materials Science & Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan;3. Institute of Photonics Technologies, National Tsing-Hua University, Hsinchu 300, Taiwan;4. International College of Semiconductor Technology, National Chiao-Tung University, Hsinchu 300, Taiwan;1. Department of Physics and Photon Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea;2. Sejong Academy of Science and Arts, Sejong 30099, Republic of Korea;3. Korea Institute of Science and Technology, Seoul 02792, Republic of Korea;1. Aristotle University of Thessaloniki, Department of Physics, 54124 Thessaloniki, Greece;2. IMEP-LAHC Laboratory in Minatec, Parvis Louis Neel, 38016 Grenoble Cedec 16, France;1. School of Electronic Engineering, Bangor University, Dean Street, Bangor, Gwynedd, LL57 1UT, UK;2. Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Centre of Research in Energy and Materials (CNPEM), CEP 13083-970, Campinas, São Paulo, Brazil;3. Department of Physics, São Paulo State University (UNESP), PO Box 266, CEP 19060-900, Presidente Prudente, São Paulo, Brazil;4. Institute of Physics of São Carlos, University of São Paulo (USP), PO Box 369, CEP 13560-970, São Carlos, São Paulo, Brazil |
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| Abstract: | In this paper, the hot-carrier-injected oxide region in the front interfaces is systematically investigated for partially depleted silicon-on-insulator (PDSOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) devices fabricated on a SIMOX wafer. The gate oxide properties associated with channel hot-carrier effects are investigated and the hot-carrier-induced device degradations are analyzed using stress experiments with three main types of hot-carrier injections-maximum gate current, maximum substrate current and parasitic bipolar transistor action. Based on experimental results, the influence of these injected carriers on the gate oxide properties is clarified. As a matter of fact, NMOSFETs degradation mechanism is shown to be caused by hot holes injected into the drain side of the gate oxide, and electrons trapped in the gate oxide can accelerate the gate oxide breakdown. PMOSFETs degradation mechanism depends on the biasing conditions. For the first time, we conclude that the electrical characteristics of NMOSFETs are significantly different from that of PMOSFETs after the gate oxide breakdown. An extensive discussion of the experimental results is provided. |
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