| InGaAsP/InP准平面异质结双极晶体管及其与光器件的集成 |
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| 引用本文： | 李维旦,富小妹,潘慧珍. InGaAsP/InP准平面异质结双极晶体管及其与光器件的集成[J]. 半导体学报, 1989, 10(3): 173-178 |
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| 作者姓名： | 李维旦 富小妹 潘慧珍 |
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| 作者单位： | 中国科学院上海冶金研究所 上海(李维旦，富小妹)，中国科学院上海冶金研究所 上海(潘慧珍) |
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| 摘 要： | 本文采用计算机辅助分析等方法,讨论了InGaAs/InP异质结双极晶体管(HBT)结构参数与其性能的关系.在此基础上,提出了一种准平面、双集电区HBT,及其相应的制作工艺.初步测试了器件的性能,就其与材料质量的关系作了讨论.文章还提出和制作了一种采用这种HBT为电子器件的光电子集成电路(OEIC).
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| 关 键 词： | InGaAsP／InP 异质结 晶体管 |
Quasi-Planar InGaAsP/InP Heterojunction Bipolar Transistor and Its Intergration with Optoelectronic Devices |
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| Li Weidan/. Quasi-Planar InGaAsP/InP Heterojunction Bipolar Transistor and Its Intergration with Optoelectronic Devices[J]. Chinese Journal of Semiconductors, 1989, 10(3): 173-178 |
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| Authors: | Li Weidan/ |
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| Affiliation: | Li Weidan/Shanghai Institute of Metallurgy,Academia SinicaFu Xiaomei/Shanghai Institute of Metallurgy,Academia SinicaPan Huizhen/Shanghai Institute of Metallurgy,Academia Sinica |
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| Abstract: | The relationship between the structure parameters and the characteristics of InGaAsP/InPheterojunction bipolar transistors (HBTs) has been studied by means of computer aided analysismethod.Based on it,a quasi-planar double collection region structure for the HBT and thefabrication techniques for the structure have been put forward.The effects of material qualityon the characteristics of HBTs have been discussed.And moreover,an InGaAsP/InP OEIC bas-ed on such kind of HBT has been analysed and fabricated. |
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| Keywords: | InGaAsP/InP Heterojunction Bipolar Transistor OEIC |
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