650-nm vertical-cavity surface-emitting lasers: laser properties and reliability investigations |
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Authors: | Knigge A Franke R Knigge S Sumpf B Vogel K Zorn M Weyers M Trankle G |
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Affiliation: | Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin; |
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Abstract: | 650-nm AlGaInP-AlGaAs-based oxide-confined VCSELs are investigated in dependence on the current aperture size. VCSELs with small aperture (a=5 /spl mu/m) have a maximum continuous-wave (CW) output power of about 1 mW at room temperature. They reach higher operating temperatures (T/sub max/=55/spl deg/C), have narrower beam profiles, less transverse modes, and a higher side mode suppression compared to large aperture VCSELs (a>13 /spl mu/m). The latter devices emit a CW-output power P=3 mW at 20/spl deg/C. Reliability tests of 655-nm devices show at 20/spl deg/C an output power of P/spl ap/0.4 mW over more than 1000 h and at 40/spl deg/C P/spl ap/0.1 mW over 500 h. |
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