Hole transport materials with high glass transition temperatures for highly stable organic light-emitting diodes |
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| Authors: | Jeonghun KwakYi-Yeol Lyu Seunguk NohHyunkoo Lee Myeongjin ParkBonggoo Choi Kookheon Char Changhee Lee |
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| Affiliation: | a Department of Electronic Engineering, Dong-A University, Busan 604-714, Republic of Koreab Unitech Co., Ltd., 398-6, Moknae-dong, Danwon-gu, Ansan-city, Gyeonggi-do, 425-100, Republic of Koreac School of Electrical and Computer Engineering, Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Republic of Koread School of Chemical and Biological Engineering, Intelligent Hybrids Research Center, Seoul National University, Seoul 151-744, Republic of Koreae Department of Chemical and Biomolecular Engineering, Electronic Material Lab, Yonsei University, Seoul 120-749, Republic of Korea |
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| Abstract: | Two hole transport materials with high glass transition temperatures (Tg ~ 200 °C) have been synthesized by replacing the phenyl groups of 4,4′-bisN-(1-naphthyl-1)-N′-phenyl-amino]-biphenyl (α-NPD) with the bulkier phenanthrene (N,N′-di(naphthalene-1-yl)-N,N′-di(phenanthrene-9-yl)biphenyl-4,4′-diamine, NPhenD) or anthracene (N,N′-di(anthracene-9-yl)-N,N′-di(naphthalene-1-yl)biphenyl-4,4′-diamine, NAD). The organic light-emitting diodes (OLEDs) using these hole transport materials exhibited stable operation at high temperatures up to 420 K, improved device lifetimes, and reduced operating voltage changes compared to the conventional hole transport materials owing to their high Tg. Although NAD has quite small bandgap as a hole transport material, superior thermal properties of NPhenD and NAD suggest that they can be promising materials for highly stable and high temperature-durable OLEDs and other organic optoelectronic devices. |
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| Keywords: | Organic light-emitting diode Hole transport material High glass transition temperature High stability |
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