| 光退火制备多晶硅薄膜与量子态模型 |
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| 引用本文： | 靳锐敏,卢景霄,扬仕娥,张丽伟,冯团辉.光退火制备多晶硅薄膜与量子态模型[J].中国材料科技与设备,2007,4(1):98-99,109. |
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| 作者姓名： | 靳锐敏 卢景霄 扬仕娥 张丽伟 冯团辉 |
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| 作者单位： | 郑州大学材料物理教育部重点实验室,河南郑州450052 |
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| 摘 要： | 本文发现在用光退火制备多晶硅薄膜过程中退火温度、时间等与多晶硅薄膜晶粒大小等晶化性质符合量子态模型。并对其物理思想进行了分析。
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| 关 键 词： | 量子态模型 光退火 Raman光谱 |
The Quantum States in Fabricating Poly- Si by Rapid Thermal Annealing |
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| JIN Rui - min , LU jing - xiao , YANG shi - e, ZHANG Li - wei , FENG Tuan - hui.The Quantum States in Fabricating Poly- Si by Rapid Thermal Annealing[J].Chinese Materials Science Technology & Equipment,2007,4(1):98-99,109. |
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| Authors: | JIN Rui - min LU jing - xiao YANG shi - e ZHANG Li - wei FENG Tuan - hui |
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| Abstract: | The quantum states is studied in fabricating Poly - Si by rapid thermal annealing, it is found that the quantum state model is shown between polycrystalline silicon size and the annealing temperature and annealing time. The physical idea of quantum state model is discussion. |
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| Keywords: | The quantum states model Rapid thermal annealing Raman scattering |
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