High-power-density 4H-SiC RF MOSFETs |
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| Authors: | Gudjonsson G. Allerstam F. Olafsson H.O. Nilsson P.A. Hjelmgren H. Andersson K. Sveinbjornsson E.O. Zirath H. Rodle T. Jos R. |
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| Affiliation: | Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Goteborg, Sweden; |
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| Abstract: | The authors have made the first 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz, delivering RF power of 1.9 W/mm at 3 GHz. The transistors withstand 200 V drain voltage, are normally off, and show no gate lag, which is often encountered in SiC MESFETs. The measured devices have a single drain finger and a double gate finger, and a total gate width of 0.8 mm. To their knowledge, this is the first time that power densities above 1 W/mm at 3 GHz are reported for SiC MOSFETs. |
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