| 锰铜薄膜的制备及压阻特性 |
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| 引用本文： | 杨邦朝,滕林,杜晓松,周鸿仁. 锰铜薄膜的制备及压阻特性[J]. 电子元件与材料, 2004, 23(9): 3-5 |
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| 作者姓名： | 杨邦朝 滕林 杜晓松 周鸿仁 |
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| 作者单位： | 电子科技大学微电子与固体电子学院,四川,成都,610054;电子科技大学微电子与固体电子学院,四川,成都,610054;电子科技大学微电子与固体电子学院,四川,成都,610054;电子科技大学微电子与固体电子学院,四川,成都,610054 |
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| 基金项目： | 军事电子预研基金资助项目(AW030412) |
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| 摘 要： | 为了锰铜传感器微型化,采用直流磁控溅射法制备适合高压力测量的锰铜薄膜,用X射线衍射和扫描电子显微镜技术分析了薄膜的结构和形貌,动态加载实验标定了锰铜薄膜的压阻系数。研究结果表明,晶粒尺寸决定了薄膜的压阻系数,经360℃热处理1h后,薄膜晶粒长大,压阻系数有着明显提高(K值达到0.02GPa–1),性能达到锰铜箔的水平。
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| 关 键 词： | 电子技术 锰铜薄膜 X射线衍射 扫描电镜 压阻系数 |
| 文章编号： | 1001-2028(2004)09-0003-03 |
| 修稿时间： | 2004-04-29 |
Piezoresistance Characteristics of Manganin Thin Films |
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| YANG Bang-chao,TENG Lin,DU Xiao-song,ZHOU Hong-ren. Piezoresistance Characteristics of Manganin Thin Films[J]. Electronic Components & Materials, 2004, 23(9): 3-5 |
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| Authors: | YANG Bang-chao TENG Lin DU Xiao-song ZHOU Hong-ren |
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| Abstract: | For sensor of manganin microminiaturization, manganin thin films aimed at high-pressure measurement were prepared by DC magnetron sputtering. The structure and morphology of the films were analysed by XRD and SEM technique. The piezoresistance coefficient K is abtained through dynamic calibration. The experimental result shows that K depends on grain size of films. It is found that heat treatment at 360℃, 1 h is helpful for the growth of larger size grains, and improves K of the films (0.02 GPa–1). The value of K is equal to that of the foil-like. |
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| Keywords: | electronic technology manganin thin films XRD SEM piezoresistance coefficient |
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