Development of a plate-to-plate MPCVD reactor configuration for diamond synthesis |
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| Affiliation: | 1. Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin, PR China;2. Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin 150080, PR China;3. Institute of Radio Engineering and Electronics RAS, Fryazino 141190, Russia;4. General Physics Institute RAS, 38 Vavilov Str., Moscow 119991, Russia;1. Instituto de Telecomunicações, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal;2. Instituto de Telecomunicações, Avenida Rovisco Pais 1, 1049-001 Lisboa, Portugal;3. Universidade do Algarve, Faculdade de Ciências e Tecnologia, Campus de Gambelas, 8005-139 Faro, Portugal;4. Centro Universitário FEI, Physics Department, São Bernardo do Campo, SP, Brazil;5. Department of Electronics, Telecommunications and Informatics, University of Aveiro, 3810-193 Aveiro, Portugal;6. Department of Physics and I3N, Institute for Nanostructures, Nanomodulation and Nanofabrication, University of Aveiro, 3810-193 Aveiro, Portugal |
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| Abstract: | The design and performance of a microwave plasma chemical vapor deposition (MPCVD) reactor based on compressed microwave waveguides and plate-to-plate substrate holders are described. This reactor can be operated at pressures from 10 to 40 kPa with microwave power of 0.4–1.2 kW, and a high plasma power density up to 500 W/cm3 can be obtained. The single-crystal diamond (lower substrate holder) and polycrystalline diamond (upper substrate holder) have been grown by the plate-to-plate MPCVD reactor using high pressure CH4-H2 mixture gases. Experimental results show that high quality single-crystal diamond and polycrystalline diamond were simultaneously synthesized at a growth rate of 25 μm/h and 12 μm/h, respectively. The results indicate that our MPCVD reactor is unique for the synthesis of diamond with high efficiency. |
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