Diamond based field-effect transistors with SiNx and ZrO2 double dielectric layers |
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| Affiliation: | 1. Key Laboratory for Physical Electronics and Devices of the Ministry of Education, The School of Electronic and Information Engineering, Xi''an Jiaotong University, Xi''an 710049, PR China;2. Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, PR China;3. Nation Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, PR China;1. Univ. Grenoble Alpes, Inst. NEEL, F-38042 Grenoble, France;2. CNRS, Inst. NEEL, F-38042 Grenoble, France;3. Univ. Grenoble Alpes, G2Elab, F-38042 Grenoble, France;4. CNRS, G2Elab, F-38042 Grenoble, France;5. Sensor Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;1. Key Lab for Physical Electronics and Devices, Ministry of Education, Xi''an Jiaotong University, Xi''an 710049, PR China;2. Institute of Wide Band Gap Semiconductors, School of Electronics and Information Engineering, Xi''an Jiaotong University, Xi''an 710049, PR China;1. National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;2. School of Electronic and Information Engineering, Xi''an Jiaotong University, Xi''an 710049, China |
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| Abstract: | A diamond-based field-effect transistor (FET) with SiNx and ZrO2 double dielectric layer has been demonstrated. The SiNx and ZrO2 gate dielectric are deposited by plasma-enhanced chemical vapor deposition (PECVD) and radio frequency (RF) sputter methods, respectively. SiNx layer is found to have the ability to preserve the conduction channel at the surface of hydrogen-terminated diamond film. The leakage current density (J) of SiNx/ZrO2 diamond metal-insulator-semiconductor FET (MISFET) keeps lower than 3.88 × 10? 5 A·cm? 2 when the gate bias was changed from 2 V to ? 8 V. The double dielectric layer FET operates in a p-type depletion mode, whose maximum drain-source current, threshold voltage, maximum transconductance, effective mobility and sheet hole density are determined to be ? 28.5 mA·mm? 1, 2.2 V, 4.53 mS·mm? 1, 38.9 cm2·V? 1·s? 1, and 2.14 × 1013 cm? 2, respectively. |
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